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1/11 september 2004 stp16nk65z STB16NK65Z-S n-channel 650v - 0.38 ? - 13a to-220 / i 2 spak zener - protected supermesh? mosfet table 1: general features typical r ds (on) = 0.38 ? extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established stripbased powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabil- ity for the most demanding applications. such se- ries complements st full range of high voltage mosfets including revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp16nk65z STB16NK65Z-S 650 v 650 v < 0.50 ? < 0.50 ? 13 a 13 a 190 w 190 w 1 2 3 1 2 3 i2spak to-220 sales type marking package packaging stp16nk65z p16nk65z to-220 tube STB16NK65Z-S b16nk65z i 2 spak tube rev. 2
stp16nk65z - STB16NK65Z-S 2/11 table 3: absolute maximum ratings (*) pulse width limited by safe operating area (1) i sd 13 a, di/dt 200 a / s, v dd v (br)dss ,t j t jmax table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fromgate to source. in this respect the zener voltage ia appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit v ds drain-source voltage (v gs = 0) 650 v v dgr drain-gate voltage (r gs = 20 k ? ) 650 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 13 a i d drain current (continuous) at t c = 100 c 8.19 a i dm (*) drain current (pulsed) 52 a p tot total dissipation at t c = 25 c 190 w derating factor 1.51 w/ c v esd(g-s) gate source eds (hbm-c=100pf, r=1.5k ?) 6000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c rthj-case thermal resistance junction-case max 0.66 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max. value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 13 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj symbol parameter test condition min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/11 stp16nk65z - STB16NK65Z-S electrical characteristics (t case =25 c unless otherwise specified) table 7: on/off table 8: dynamic table 9: source drain diode (1) pulsed: pulse duration = 300s, duty cycle 1.5% (2) pulse width limited by safe operating area (*) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 33.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 6.5 a 0.38 0.50 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 6.5 a 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 2750 275 60 pf pf pf c oss eq. (*) equivalent output capacitance v gs = 0v, v ds = 6.5 v to 520 v 188 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 325 v, i d = 6.5 a r g = 4.7 ? v gs = 10 v (see figure 17) 25 25 68 17 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 13 a, v gs = 10 v (see figure 20) 89 18 45 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 13 52 a a v sd (1) forward on voltage i sd = 13 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a, di/dt = 100 a/s, v dd = 100 v, t j = 25 c (see figure 18) 500 5.2 21 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a, di/dt = 100 a/s, v dd = 100 v, t j = 150 c (see figure 18) 615 7 22.5 ns c a
stp16nk65z - STB16NK65Z-S 4/11 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/11 stp16nk65z - STB16NK65Z-S figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized bvdss vs temperature
stp16nk65z - STB16NK65Z-S 6/11 figure 15: avalanche energy vs starting tj j
7/11 stp16nk65z - STB16NK65Z-S figure 16: unclamped inductive load test cir- cuit figure 17: switching times test circuit for resistive load figure 18: test circuit for inductive load switching and diode recovery times figure 19: unclamped inductive wafeform figure 20: gate charge test circuit
stp16nk65z - STB16NK65Z-S 8/11 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/11 stp16nk65z - STB16NK65Z-S dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.394 0.409 g 4.88 5.28 0.192 0.208 l 16.7 17.5 0.657 0.689 l2 1.27 1.4 0.05 0.055 l3 13.82 14.42 0.544 0.568 i 2 spak mechanical data
stp16nk65z - STB16NK65Z-S 10/11 table 10: revision history date revision description of changes 06-aug-2004 1 first release. 02-sep-2004 2 complete version
11/11 stp16nk65z - STB16NK65Z-S information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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